VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS BY THE SINGLE FLAT TEMPERATURE ZONE METHOD

被引：8

作者：

KOUKITU, A

KOUNO, S

TAKASHIMA, K

SEKI, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1984年 / 23卷 / 08期

关键词：

D O I：

10.1143/JJAP.23.951

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：951 / 955

页数：5

共 19 条

[1] HIGH-PURITY EPITAXIAL GAAS [J].

AOKI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (09) :1267-1271

[2]

Ashen D. J., 1975, Gallium Arsenide and Related Compounds, 1974, P229

[3] VAPOR GROWTH OF EPITAXIAL GAAS - SUMMARY OF PARAMETERS WHICH INFLUENCE PURITY AND MORPHOLOGY OF EPITAXIAL LAYERS [J].

DILORENZO, JV .

JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) :189-+

[4] EFFECTS OF ASCL3 MOLE FRACTION ON INCORPORATION OF GERMANIUM, SILICON, SELENIUM, AND SULFUR INTO VAPOR GROWN EPITAXIAL LAYERS OF GAAS [J].

DILORENZO, JV ;

MOORE, GE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) :1823-+

[5]

Hollan L., 1975, Gallium Arsenide and Related Compounds, 1974, P22

[6] INFLUENCE OF GROWTH-CONDITIONS ON INCORPORATION OF DEEP LEVELS IN VPE GAAS [J].

HUMBERT, A ;

HOLLAN, L ;

BOIS, D .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) :4137-4144

[7] PREPARATION OF HIGH PURITY GALLIUM ARSENIDE BY VAPOUR PHASE EPITAXIAL GROWTH [J].

KNIGHT, JR ;

EFFER, D ;

EVANS, PR .

SOLID-STATE ELECTRONICS, 1965, 8 (02) :178-&

[8] VAPOR GROWTH OF GAAS BY H-2 INTRODUCTION INTO AN INERT CARRIER GAS-STREAM [J].

KOUKITU, A ;

SEKI, H ;

FUJIMOTO, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (08) :1591-1592

[9] ELECTRICAL-PROPERTIES OF VPE GAAS GROWN BY THE SINGLE FLAT TEMPERATURE ZONE METHOD [J].

KOUKITU, A ;

SEKI, H ;

FUJIMOTO, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (09) :1747-1755

[10] VAPOR GROWTH KINETICS OF 3-5 COMPOUNDS IN A HYDROGEN INERT GAS MIXED CARRIER SYSTEM [J].

MIZUNO, O ;

WATANABE, H .

JOURNAL OF CRYSTAL GROWTH, 1975, 30 (02) :240-248

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