HIGH-PURITY EPITAXIAL GAAS

被引：8

作者：

AOKI, T ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, MUSASHINO ELECT COMMUN LAB, MUSASHINO 180, TOKYO, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1975年 / 14卷 / 09期

关键词：

D O I：

10.1143/JJAP.14.1267

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1267 / 1271

页数：5

共 18 条

[1] DEPENDENCE OF PROPERTIES OF EPITAXIAL GALLIUM-ARSENIDE ON TEMPERATURE OF ASCL3 [J].

AOKI, T ;

YAMAGUCHI, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (12) :1775-1782

[2] ASCL3 FLOW-RATE DEPENDENCE ON PROPERTIES OF EPITAXIALLY GROWN GALLIUM ARSENIDE [J].

AOKI, T ;

YAMAGUCHI, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (07) :953-+

[3]

BARRY BE, 1970, GALLIUM ARSENIDE REL, P172

[4] ORIENTED GROWTH OF SEMICONDUCTORS .2. HOMOEPITAXY OF GALLIUM ARSENIDE [J].

BOBB, LC ;

HOLLOWAY, H ;

MAXWELL, KH ;

ZIMMERMA.E .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (10) :1679-&

[5]

CAIRNS B, 1970, J ELECTROCHEM SOC, V117, pC197

[6]

CAIRNS B, 1968, J ELECTROCHEM SOC, V115, pC327

[7] VAPOR GROWTH OF EPITAXIAL GAAS - SUMMARY OF PARAMETERS WHICH INFLUENCE PURITY AND MORPHOLOGY OF EPITAXIAL LAYERS [J].

DILORENZO, JV .

JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) :189-+

[8] EFFECTS OF ASCL3 MOLE FRACTION ON INCORPORATION OF GERMANIUM, SILICON, SELENIUM, AND SULFUR INTO VAPOR GROWN EPITAXIAL LAYERS OF GAAS [J].

DILORENZO, JV ;

MOORE, GE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) :1823-+

[9]

DILORENZO JV, 1970, J ELECTROCHEM SOC, V117, pC102

[10]

EDDOLLS DV, 1967, GALLIUM ARSENIDE, P3

← 1 2 →