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VAPOR GROWTH OF GAAS BY H-2 INTRODUCTION INTO AN INERT CARRIER GAS-STREAM
被引:12
作者
:
KOUKITU, A
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO UNIV AGR & TECHNOL,FAC TECHNOL,KOGANEI,TOKYO 184,JAPAN
KOUKITU, A
SEKI, H
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO UNIV AGR & TECHNOL,FAC TECHNOL,KOGANEI,TOKYO 184,JAPAN
SEKI, H
FUJIMOTO, M
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO UNIV AGR & TECHNOL,FAC TECHNOL,KOGANEI,TOKYO 184,JAPAN
FUJIMOTO, M
机构
:
[1]
TOKYO UNIV AGR & TECHNOL,FAC TECHNOL,KOGANEI,TOKYO 184,JAPAN
[2]
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN
来源
:
JAPANESE JOURNAL OF APPLIED PHYSICS
|
1976年
/ 15卷
/ 08期
关键词
:
D O I
:
10.1143/JJAP.15.1591
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:1591 / 1592
页数:2
相关论文
共 8 条
[1]
MASS SPECTROMETRIC STUDIES OF VAPOR PHASE CRYSTAL GROWTH .1. GAASXP1-X SYSTEM (0 LESS THAN OR EQUAL TO X LESS THAN OR EQUAL TO 1)
[J].
BAN, VS
论文数:
0
引用数:
0
h-index:
0
BAN, VS
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(09)
:1473
-&
[2]
THERMODYNAMIC AND EXPERIMENTAL ASPECTS OF GALLIUM ARSENIDE VAPOR GROWTH
[J].
BOUCHER, A
论文数:
0
引用数:
0
h-index:
0
BOUCHER, A
;
HOLLAN, L
论文数:
0
引用数:
0
h-index:
0
HOLLAN, L
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1970,
117
(07)
:932
-&
[3]
DiLorenzo J. V., 1975, Gallium Arsenide and Related Compounds, 1974, P362
[4]
THERMODYNAMIC CALCULATION FOR VAPOR GROWTH OF INXGA1-XAS - IN-GA-AS-CL-H SYSTEM
[J].
MINAGAWA, S
论文数:
0
引用数:
0
h-index:
0
MINAGAWA, S
;
SEKI, H
论文数:
0
引用数:
0
h-index:
0
SEKI, H
;
EGUCHI, H
论文数:
0
引用数:
0
h-index:
0
EGUCHI, H
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1972,
11
(06)
:855
-&
[5]
NEW METHODS OF VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS
[J].
SEKI, H
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO UNIV AGR & TECHNOL,FAC TECHNOL,KOGANEI 184,TOKYO,JAPAN
SEKI, H
;
KOOKITU, A
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO UNIV AGR & TECHNOL,FAC TECHNOL,KOGANEI 184,TOKYO,JAPAN
KOOKITU, A
;
OHTA, K
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO UNIV AGR & TECHNOL,FAC TECHNOL,KOGANEI 184,TOKYO,JAPAN
OHTA, K
;
FUJIMOTO, M
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO UNIV AGR & TECHNOL,FAC TECHNOL,KOGANEI 184,TOKYO,JAPAN
FUJIMOTO, M
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1976,
15
(01)
:11
-17
[6]
THERMODYNAMIC STUDY OF TRANSPORT AND EPITAXIAL GROWTH OF GAAS IN AN OPEN TUBE
[J].
SEKI, H
论文数:
0
引用数:
0
h-index:
0
SEKI, H
;
MORIYAMA, K
论文数:
0
引用数:
0
h-index:
0
MORIYAMA, K
;
ASAKAWA, I
论文数:
0
引用数:
0
h-index:
0
ASAKAWA, I
;
HORIE, S
论文数:
0
引用数:
0
h-index:
0
HORIE, S
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1968,
7
(11)
:1324
-&
[7]
NEW VAPOR GROWTH METHOD FOR III-V COMPOUND SEMICONDUCTORS USING A SINGLE FLAT TEMPERATURE ZONE
[J].
SEKI, H
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO UNIV AGR & TECHNOL, FAC TECHNOL, KOGANEI, TOKYO 184, JAPAN
TOKYO UNIV AGR & TECHNOL, FAC TECHNOL, KOGANEI, TOKYO 184, JAPAN
SEKI, H
;
EGUCHI, H
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO UNIV AGR & TECHNOL, FAC TECHNOL, KOGANEI, TOKYO 184, JAPAN
TOKYO UNIV AGR & TECHNOL, FAC TECHNOL, KOGANEI, TOKYO 184, JAPAN
EGUCHI, H
;
论文数:
引用数:
h-index:
机构:
KOBAYASHI, H
.
JOURNAL OF CRYSTAL GROWTH,
1974,
24
(OCT)
:225
-228
[8]
ANOMALOUS VAPOR TRANSPORT REACTION OF GAAS WITH ASCL3 IN H2 GAS-FLOW SYSTEM
[J].
WATANABE, H
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELECT CO LTD,CENT RES LABS,KAWASAKI,JAPAN
NIPPON ELECT CO LTD,CENT RES LABS,KAWASAKI,JAPAN
WATANABE, H
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1975,
14
(10)
:1451
-1458
←
1
→
共 8 条
[1]
MASS SPECTROMETRIC STUDIES OF VAPOR PHASE CRYSTAL GROWTH .1. GAASXP1-X SYSTEM (0 LESS THAN OR EQUAL TO X LESS THAN OR EQUAL TO 1)
[J].
BAN, VS
论文数:
0
引用数:
0
h-index:
0
BAN, VS
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(09)
:1473
-&
[2]
THERMODYNAMIC AND EXPERIMENTAL ASPECTS OF GALLIUM ARSENIDE VAPOR GROWTH
[J].
BOUCHER, A
论文数:
0
引用数:
0
h-index:
0
BOUCHER, A
;
HOLLAN, L
论文数:
0
引用数:
0
h-index:
0
HOLLAN, L
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1970,
117
(07)
:932
-&
[3]
DiLorenzo J. V., 1975, Gallium Arsenide and Related Compounds, 1974, P362
[4]
THERMODYNAMIC CALCULATION FOR VAPOR GROWTH OF INXGA1-XAS - IN-GA-AS-CL-H SYSTEM
[J].
MINAGAWA, S
论文数:
0
引用数:
0
h-index:
0
MINAGAWA, S
;
SEKI, H
论文数:
0
引用数:
0
h-index:
0
SEKI, H
;
EGUCHI, H
论文数:
0
引用数:
0
h-index:
0
EGUCHI, H
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1972,
11
(06)
:855
-&
[5]
NEW METHODS OF VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS
[J].
SEKI, H
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO UNIV AGR & TECHNOL,FAC TECHNOL,KOGANEI 184,TOKYO,JAPAN
SEKI, H
;
KOOKITU, A
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO UNIV AGR & TECHNOL,FAC TECHNOL,KOGANEI 184,TOKYO,JAPAN
KOOKITU, A
;
OHTA, K
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO UNIV AGR & TECHNOL,FAC TECHNOL,KOGANEI 184,TOKYO,JAPAN
OHTA, K
;
FUJIMOTO, M
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO UNIV AGR & TECHNOL,FAC TECHNOL,KOGANEI 184,TOKYO,JAPAN
FUJIMOTO, M
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1976,
15
(01)
:11
-17
[6]
THERMODYNAMIC STUDY OF TRANSPORT AND EPITAXIAL GROWTH OF GAAS IN AN OPEN TUBE
[J].
SEKI, H
论文数:
0
引用数:
0
h-index:
0
SEKI, H
;
MORIYAMA, K
论文数:
0
引用数:
0
h-index:
0
MORIYAMA, K
;
ASAKAWA, I
论文数:
0
引用数:
0
h-index:
0
ASAKAWA, I
;
HORIE, S
论文数:
0
引用数:
0
h-index:
0
HORIE, S
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1968,
7
(11)
:1324
-&
[7]
NEW VAPOR GROWTH METHOD FOR III-V COMPOUND SEMICONDUCTORS USING A SINGLE FLAT TEMPERATURE ZONE
[J].
SEKI, H
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO UNIV AGR & TECHNOL, FAC TECHNOL, KOGANEI, TOKYO 184, JAPAN
TOKYO UNIV AGR & TECHNOL, FAC TECHNOL, KOGANEI, TOKYO 184, JAPAN
SEKI, H
;
EGUCHI, H
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO UNIV AGR & TECHNOL, FAC TECHNOL, KOGANEI, TOKYO 184, JAPAN
TOKYO UNIV AGR & TECHNOL, FAC TECHNOL, KOGANEI, TOKYO 184, JAPAN
EGUCHI, H
;
论文数:
引用数:
h-index:
机构:
KOBAYASHI, H
.
JOURNAL OF CRYSTAL GROWTH,
1974,
24
(OCT)
:225
-228
[8]
ANOMALOUS VAPOR TRANSPORT REACTION OF GAAS WITH ASCL3 IN H2 GAS-FLOW SYSTEM
[J].
WATANABE, H
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELECT CO LTD,CENT RES LABS,KAWASAKI,JAPAN
NIPPON ELECT CO LTD,CENT RES LABS,KAWASAKI,JAPAN
WATANABE, H
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1975,
14
(10)
:1451
-1458
←
1
→