NEW VAPOR GROWTH METHOD FOR III-V COMPOUND SEMICONDUCTORS USING A SINGLE FLAT TEMPERATURE ZONE

被引：12

作者：

SEKI, H ^{[1
]}

EGUCHI, H ^{[1
]}

KOBAYASHI, H ^{[1
]}

机构：

[1] TOKYO UNIV AGR & TECHNOL, FAC TECHNOL, KOGANEI, TOKYO 184, JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1974年 / 24卷 / OCT期

关键词：

D O I：

10.1016/0022-0248(74)90308-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：225 / 228

页数：4

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