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NEW METHODS OF VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS
被引:13
作者
:
SEKI, H
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO UNIV AGR & TECHNOL,FAC TECHNOL,KOGANEI 184,TOKYO,JAPAN
SEKI, H
KOOKITU, A
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO UNIV AGR & TECHNOL,FAC TECHNOL,KOGANEI 184,TOKYO,JAPAN
KOOKITU, A
OHTA, K
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO UNIV AGR & TECHNOL,FAC TECHNOL,KOGANEI 184,TOKYO,JAPAN
OHTA, K
FUJIMOTO, M
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO UNIV AGR & TECHNOL,FAC TECHNOL,KOGANEI 184,TOKYO,JAPAN
FUJIMOTO, M
机构
:
[1]
TOKYO UNIV AGR & TECHNOL,FAC TECHNOL,KOGANEI 184,TOKYO,JAPAN
[2]
NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO 180,TOKYO,JAPAN
来源
:
JAPANESE JOURNAL OF APPLIED PHYSICS
|
1976年
/ 15卷
/ 01期
关键词
:
D O I
:
10.1143/JJAP.15.11
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:11 / 17
页数:7
相关论文
共 10 条
[1]
THERMODYNAMIC AND EXPERIMENTAL ASPECTS OF GALLIUM ARSENIDE VAPOR GROWTH
[J].
BOUCHER, A
论文数:
0
引用数:
0
h-index:
0
BOUCHER, A
;
HOLLAN, L
论文数:
0
引用数:
0
h-index:
0
HOLLAN, L
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1970,
117
(07)
:932
-&
[2]
GAS PHASE COMPOSITION IN GA-ASCL3-H2 SYSTEM FOR EPITAXIAL DEPOSITION OF GAAS
[J].
HAMMERLING, H
论文数:
0
引用数:
0
h-index:
0
HAMMERLING, H
.
JOURNAL OF CRYSTAL GROWTH,
1971,
9
(01)
:171
-+
[3]
REED TB, 1969, SOLID STATE RES REPT, P21
[4]
EPITAXIAL SYNTHESIS OF GAAS USING A FLOW SYSTEM
[J].
RUBENSTEIN, M
论文数:
0
引用数:
0
h-index:
0
RUBENSTEIN, M
;
MYERS, E
论文数:
0
引用数:
0
h-index:
0
MYERS, E
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(04)
:365
-+
[5]
DIRECT OBSERVATION OF CRUST FORMATION IN GA-ASCL3-H2 AND GA-PCL3-H2 SYSTEMS
[J].
SEKI, H
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO UNIV AGR & TECHNOL,FAC TECHNOL,KOGANEI 184,TOKYO,JAPAN
SEKI, H
;
KOOKITU, A
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO UNIV AGR & TECHNOL,FAC TECHNOL,KOGANEI 184,TOKYO,JAPAN
KOOKITU, A
;
FUJIMOTO, M
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO UNIV AGR & TECHNOL,FAC TECHNOL,KOGANEI 184,TOKYO,JAPAN
FUJIMOTO, M
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1975,
14
(03)
:411
-412
[6]
THERMODYNAMIC STUDY OF TRANSPORT AND EPITAXIAL GROWTH OF GAAS IN AN OPEN TUBE
[J].
SEKI, H
论文数:
0
引用数:
0
h-index:
0
SEKI, H
;
MORIYAMA, K
论文数:
0
引用数:
0
h-index:
0
MORIYAMA, K
;
ASAKAWA, I
论文数:
0
引用数:
0
h-index:
0
ASAKAWA, I
;
HORIE, S
论文数:
0
引用数:
0
h-index:
0
HORIE, S
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1968,
7
(11)
:1324
-&
[7]
NEW VAPOR GROWTH METHOD FOR III-V COMPOUND SEMICONDUCTORS USING A SINGLE FLAT TEMPERATURE ZONE
[J].
SEKI, H
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO UNIV AGR & TECHNOL, FAC TECHNOL, KOGANEI, TOKYO 184, JAPAN
TOKYO UNIV AGR & TECHNOL, FAC TECHNOL, KOGANEI, TOKYO 184, JAPAN
SEKI, H
;
EGUCHI, H
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO UNIV AGR & TECHNOL, FAC TECHNOL, KOGANEI, TOKYO 184, JAPAN
TOKYO UNIV AGR & TECHNOL, FAC TECHNOL, KOGANEI, TOKYO 184, JAPAN
EGUCHI, H
;
论文数:
引用数:
h-index:
机构:
KOBAYASHI, H
.
JOURNAL OF CRYSTAL GROWTH,
1974,
24
(OCT)
:225
-228
[8]
INFLUENCE OF SUBSTRATE TEMPERATURE ON GAAS EPITAXIAL DEPOSITION RATES
[J].
SHAW, DW
论文数:
0
引用数:
0
h-index:
0
SHAW, DW
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(04)
:405
-&
[9]
NEW METHOD OF VAPOR GROWTH OF GAAS
[J].
WATANABE, H
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELECT CO LTD,CENT RES LABS,1753 SHIMONUMABE,KAWASAKI 311,JAPAN
NIPPON ELECT CO LTD,CENT RES LABS,1753 SHIMONUMABE,KAWASAKI 311,JAPAN
WATANABE, H
.
JOURNAL OF CRYSTAL GROWTH,
1974,
24
(OCT)
:220
-224
[10]
SI CONTAMINATION IN OPEN FLOW QUARTZ SYSTEMS FOR GROWTH OF GAAS AND GAP
[J].
WEINER, ME
论文数:
0
引用数:
0
h-index:
0
WEINER, ME
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1972,
119
(04)
:496
-&
←
1
→
共 10 条
[1]
THERMODYNAMIC AND EXPERIMENTAL ASPECTS OF GALLIUM ARSENIDE VAPOR GROWTH
[J].
BOUCHER, A
论文数:
0
引用数:
0
h-index:
0
BOUCHER, A
;
HOLLAN, L
论文数:
0
引用数:
0
h-index:
0
HOLLAN, L
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1970,
117
(07)
:932
-&
[2]
GAS PHASE COMPOSITION IN GA-ASCL3-H2 SYSTEM FOR EPITAXIAL DEPOSITION OF GAAS
[J].
HAMMERLING, H
论文数:
0
引用数:
0
h-index:
0
HAMMERLING, H
.
JOURNAL OF CRYSTAL GROWTH,
1971,
9
(01)
:171
-+
[3]
REED TB, 1969, SOLID STATE RES REPT, P21
[4]
EPITAXIAL SYNTHESIS OF GAAS USING A FLOW SYSTEM
[J].
RUBENSTEIN, M
论文数:
0
引用数:
0
h-index:
0
RUBENSTEIN, M
;
MYERS, E
论文数:
0
引用数:
0
h-index:
0
MYERS, E
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(04)
:365
-+
[5]
DIRECT OBSERVATION OF CRUST FORMATION IN GA-ASCL3-H2 AND GA-PCL3-H2 SYSTEMS
[J].
SEKI, H
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO UNIV AGR & TECHNOL,FAC TECHNOL,KOGANEI 184,TOKYO,JAPAN
SEKI, H
;
KOOKITU, A
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO UNIV AGR & TECHNOL,FAC TECHNOL,KOGANEI 184,TOKYO,JAPAN
KOOKITU, A
;
FUJIMOTO, M
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO UNIV AGR & TECHNOL,FAC TECHNOL,KOGANEI 184,TOKYO,JAPAN
FUJIMOTO, M
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1975,
14
(03)
:411
-412
[6]
THERMODYNAMIC STUDY OF TRANSPORT AND EPITAXIAL GROWTH OF GAAS IN AN OPEN TUBE
[J].
SEKI, H
论文数:
0
引用数:
0
h-index:
0
SEKI, H
;
MORIYAMA, K
论文数:
0
引用数:
0
h-index:
0
MORIYAMA, K
;
ASAKAWA, I
论文数:
0
引用数:
0
h-index:
0
ASAKAWA, I
;
HORIE, S
论文数:
0
引用数:
0
h-index:
0
HORIE, S
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1968,
7
(11)
:1324
-&
[7]
NEW VAPOR GROWTH METHOD FOR III-V COMPOUND SEMICONDUCTORS USING A SINGLE FLAT TEMPERATURE ZONE
[J].
SEKI, H
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO UNIV AGR & TECHNOL, FAC TECHNOL, KOGANEI, TOKYO 184, JAPAN
TOKYO UNIV AGR & TECHNOL, FAC TECHNOL, KOGANEI, TOKYO 184, JAPAN
SEKI, H
;
EGUCHI, H
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO UNIV AGR & TECHNOL, FAC TECHNOL, KOGANEI, TOKYO 184, JAPAN
TOKYO UNIV AGR & TECHNOL, FAC TECHNOL, KOGANEI, TOKYO 184, JAPAN
EGUCHI, H
;
论文数:
引用数:
h-index:
机构:
KOBAYASHI, H
.
JOURNAL OF CRYSTAL GROWTH,
1974,
24
(OCT)
:225
-228
[8]
INFLUENCE OF SUBSTRATE TEMPERATURE ON GAAS EPITAXIAL DEPOSITION RATES
[J].
SHAW, DW
论文数:
0
引用数:
0
h-index:
0
SHAW, DW
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(04)
:405
-&
[9]
NEW METHOD OF VAPOR GROWTH OF GAAS
[J].
WATANABE, H
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELECT CO LTD,CENT RES LABS,1753 SHIMONUMABE,KAWASAKI 311,JAPAN
NIPPON ELECT CO LTD,CENT RES LABS,1753 SHIMONUMABE,KAWASAKI 311,JAPAN
WATANABE, H
.
JOURNAL OF CRYSTAL GROWTH,
1974,
24
(OCT)
:220
-224
[10]
SI CONTAMINATION IN OPEN FLOW QUARTZ SYSTEMS FOR GROWTH OF GAAS AND GAP
[J].
WEINER, ME
论文数:
0
引用数:
0
h-index:
0
WEINER, ME
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1972,
119
(04)
:496
-&
←
1
→