NEW METHODS OF VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS

被引:13
作者
SEKI, H
KOOKITU, A
OHTA, K
FUJIMOTO, M
机构
[1] TOKYO UNIV AGR & TECHNOL,FAC TECHNOL,KOGANEI 184,TOKYO,JAPAN
[2] NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO 180,TOKYO,JAPAN
关键词
D O I
10.1143/JJAP.15.11
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:11 / 17
页数:7
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