学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
NEW METHOD OF VAPOR GROWTH OF GAAS
被引:14
作者
:
WATANABE, H
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELECT CO LTD,CENT RES LABS,1753 SHIMONUMABE,KAWASAKI 311,JAPAN
NIPPON ELECT CO LTD,CENT RES LABS,1753 SHIMONUMABE,KAWASAKI 311,JAPAN
WATANABE, H
[
1
]
机构
:
[1]
NIPPON ELECT CO LTD,CENT RES LABS,1753 SHIMONUMABE,KAWASAKI 311,JAPAN
来源
:
JOURNAL OF CRYSTAL GROWTH
|
1974年
/ 24卷
/ OCT期
关键词
:
D O I
:
10.1016/0022-0248(74)90307-8
中图分类号
:
O7 [晶体学];
学科分类号
:
0702 ;
070205 ;
0703 ;
080501 ;
摘要
:
引用
收藏
页码:220 / 224
页数:5
相关论文
共 6 条
[1]
THERMODYNAMIC AND EXPERIMENTAL ASPECTS OF GALLIUM ARSENIDE VAPOR GROWTH
[J].
BOUCHER, A
论文数:
0
引用数:
0
h-index:
0
BOUCHER, A
;
HOLLAN, L
论文数:
0
引用数:
0
h-index:
0
HOLLAN, L
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1970,
117
(07)
:932
-&
[2]
HURLE DTJ, 1967, CRYST GROWTH, P241
[3]
REACTION EQUILIBRIA IN GROWTH OF GAAS AND GAP BY CHLORIDE TRANSPORT PROCESS
[J].
KIRWAN, DJ
论文数:
0
引用数:
0
h-index:
0
KIRWAN, DJ
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1970,
117
(12)
:1572
-&
[4]
THERMODYNAMIC STUDY OF TRANSPORT AND EPITAXIAL GROWTH OF GAAS IN AN OPEN TUBE
[J].
SEKI, H
论文数:
0
引用数:
0
h-index:
0
SEKI, H
;
MORIYAMA, K
论文数:
0
引用数:
0
h-index:
0
MORIYAMA, K
;
ASAKAWA, I
论文数:
0
引用数:
0
h-index:
0
ASAKAWA, I
;
HORIE, S
论文数:
0
引用数:
0
h-index:
0
HORIE, S
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1968,
7
(11)
:1324
-&
[5]
KINETICS OF TRANSPORT AND EPITAXIAL GROWTH OF GAAS WITH A GA-ASCL3 SYSTEM
[J].
SHAW, DW
论文数:
0
引用数:
0
h-index:
0
SHAW, DW
.
JOURNAL OF CRYSTAL GROWTH,
1971,
8
(01)
:117
-&
[6]
SI CONTAMINATION IN OPEN FLOW QUARTZ SYSTEMS FOR GROWTH OF GAAS AND GAP
[J].
WEINER, ME
论文数:
0
引用数:
0
h-index:
0
WEINER, ME
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1972,
119
(04)
:496
-&
←
1
→
共 6 条
[1]
THERMODYNAMIC AND EXPERIMENTAL ASPECTS OF GALLIUM ARSENIDE VAPOR GROWTH
[J].
BOUCHER, A
论文数:
0
引用数:
0
h-index:
0
BOUCHER, A
;
HOLLAN, L
论文数:
0
引用数:
0
h-index:
0
HOLLAN, L
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1970,
117
(07)
:932
-&
[2]
HURLE DTJ, 1967, CRYST GROWTH, P241
[3]
REACTION EQUILIBRIA IN GROWTH OF GAAS AND GAP BY CHLORIDE TRANSPORT PROCESS
[J].
KIRWAN, DJ
论文数:
0
引用数:
0
h-index:
0
KIRWAN, DJ
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1970,
117
(12)
:1572
-&
[4]
THERMODYNAMIC STUDY OF TRANSPORT AND EPITAXIAL GROWTH OF GAAS IN AN OPEN TUBE
[J].
SEKI, H
论文数:
0
引用数:
0
h-index:
0
SEKI, H
;
MORIYAMA, K
论文数:
0
引用数:
0
h-index:
0
MORIYAMA, K
;
ASAKAWA, I
论文数:
0
引用数:
0
h-index:
0
ASAKAWA, I
;
HORIE, S
论文数:
0
引用数:
0
h-index:
0
HORIE, S
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1968,
7
(11)
:1324
-&
[5]
KINETICS OF TRANSPORT AND EPITAXIAL GROWTH OF GAAS WITH A GA-ASCL3 SYSTEM
[J].
SHAW, DW
论文数:
0
引用数:
0
h-index:
0
SHAW, DW
.
JOURNAL OF CRYSTAL GROWTH,
1971,
8
(01)
:117
-&
[6]
SI CONTAMINATION IN OPEN FLOW QUARTZ SYSTEMS FOR GROWTH OF GAAS AND GAP
[J].
WEINER, ME
论文数:
0
引用数:
0
h-index:
0
WEINER, ME
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1972,
119
(04)
:496
-&
←
1
→