EPITAXIAL SYNTHESIS OF GAAS USING A FLOW SYSTEM

[1] PREPARATION OF INAS, INP, GAAS, AND GAP BY CHEMICAL METHODS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (03) : 252 - 253

[2] GATOS H, 1959, SURFACE CHEMISTRY ME, P381

[3] GOLDSMITH N, 1963, RCA REV, V24, P546

[4] GROWTH RATES OF EPITAXIAL GALLIUM ARSENIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) : 588 - 589

[5] ING SW, 1962, J ELECTROCHEM SOC, V109, P995

[6] EPITAXIAL VAPOR GROWTH OF GE SINGLE CRYSTALS IN A CLOSED-CYCLE PROCESS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) : 248 - 255

[7] PREPARATION OF EPITAXIAL GAAS AND GAP FILMS BY VAPOR PHASE REACTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (11) : 1061 - 1065

[8] CHEMICAL TRANSPORT AND EPITAXIAL DEPOSITION OF GALLIUM ARSENIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (10) : 1059 - 1065

[9] SANGSTER RC, 1962, COMPOUND SEMICONDUCT, V1

[10] SCHROEDER JB, 1962, METALLURGY SEMICO ED, P87

[1] PREPARATION OF INAS, INP, GAAS, AND GAP BY CHEMICAL METHODS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (03) : 252 - 253

[2] GATOS H, 1959, SURFACE CHEMISTRY ME, P381

[3] GOLDSMITH N, 1963, RCA REV, V24, P546

[4] GROWTH RATES OF EPITAXIAL GALLIUM ARSENIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) : 588 - 589

[5] ING SW, 1962, J ELECTROCHEM SOC, V109, P995

[6] EPITAXIAL VAPOR GROWTH OF GE SINGLE CRYSTALS IN A CLOSED-CYCLE PROCESS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) : 248 - 255

[7] PREPARATION OF EPITAXIAL GAAS AND GAP FILMS BY VAPOR PHASE REACTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (11) : 1061 - 1065

[8] CHEMICAL TRANSPORT AND EPITAXIAL DEPOSITION OF GALLIUM ARSENIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (10) : 1059 - 1065

[9] SANGSTER RC, 1962, COMPOUND SEMICONDUCT, V1

[10] SCHROEDER JB, 1962, METALLURGY SEMICO ED, P87