CHEMICAL TRANSPORT AND EPITAXIAL DEPOSITION OF GALLIUM ARSENIDE

[1] Buckley H.E., 1951, CRYSTAL GROWTH

[2] CHARACTERISTICS OF THE (111) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (05) : 427 - 433

[3] HARPER JG, 1959, MAY EL DIV EL SOC PH

[4] JOST W, 1960, DIFFUSION SOLIDS LIQ, P425

[5] LYONS OJ, 1962, J ELECTROCHEM SOC, V109, P963

[6] TUNNEL DIODES BY VAPOR GROWTH OF GE ON GE AND ON GAAS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) : 280 - 282

[7] CRYSTAL GROWTH BY CHEMICAL TRANSPORT REACTIONS .1. BINARY, TERNARY, AND MIXED-CRYSTAL CHALCOGENIDES [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 21 (3-4) : 199 - 205

[8] ROLSTEN RF, 1961, IODIDE METALS METAL

[9] EPITAXIAL GROWTH OF SILICON [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) : 288 - 295

[1] Buckley H.E., 1951, CRYSTAL GROWTH

[2] CHARACTERISTICS OF THE (111) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (05) : 427 - 433

[3] HARPER JG, 1959, MAY EL DIV EL SOC PH

[4] JOST W, 1960, DIFFUSION SOLIDS LIQ, P425

[5] LYONS OJ, 1962, J ELECTROCHEM SOC, V109, P963

[6] TUNNEL DIODES BY VAPOR GROWTH OF GE ON GE AND ON GAAS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) : 280 - 282

[7] CRYSTAL GROWTH BY CHEMICAL TRANSPORT REACTIONS .1. BINARY, TERNARY, AND MIXED-CRYSTAL CHALCOGENIDES [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 21 (3-4) : 199 - 205

[8] ROLSTEN RF, 1961, IODIDE METALS METAL

[9] EPITAXIAL GROWTH OF SILICON [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) : 288 - 295