X-RAY STUDIES OF BORON IMPLANTED GERMANIUM SINGLE-CRYSTALS

被引：3

作者：

REK, Z

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1980年 / 61卷 / 02期

关键词：

D O I：

10.1002/pssa.2210610244

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：693 / 700

页数：8

共 15 条

[1]

[Anonymous], 1966, XRAY DETERMINATION E

[2]

Auleytner J., 1973, Acta Physica Polonica A, VA43, P507

[3] X-RAY INTEGRATED INTENSITY OF GERMANIUM EFFECT OF DISLOCATIONS AND CHEMICAL IMPURITIES [J].

BATTERMAN, BW .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (04) :508-513

[4] X-RAY INVESTIGATION OF LATTICE DEFORMATIONS IN SILICON INDUCED THROUGH HIGH-ENERGY ION IMPLANTATION [J].

BONSE, U ;

HART, M ;

SCHWUTTKE, GH .

PHYSICA STATUS SOLIDI, 1969, 33 (01) :361-+

[5] PROTON BOMBARDMENT DAMAGE IN SILICON [J].

BUBAKOVA, R ;

SZMID, Z .

PHYSICA STATUS SOLIDI, 1965, 8 (01) :105-&

[6] EFFECT OF ALPHA IRRADIATION ON X-RAY DIFFRACTION PROFILES OF SILICON SINGLE CRYSTALS [J].

BURGEAT, J ;

COLELLA, R .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) :3505-&

[7]

COLLELLA R, 1966, PHYS STATUS SOLIDI, V14, P81

[8]

EFIMOV ON, 1964, SOV PHYS-SOL STATE, V5, P1364

[9] IMPLANTATION-INDUCED STRAINS IN SILICON STUDIED BY X-RAY INTERFEROMETRY AND TOPOGRAPHY [J].

GERWARD, L .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1978, 37 (01) :95-106

[10] X-RAY STUDY OF LATERAL STRAINS IN ION-IMPLANTED SILICON [J].

GERWARD, L .

ZEITSCHRIFT FUR PHYSIK, 1973, 259 (04) :313-322

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