IMPLANTATION-INDUCED STRAINS IN SILICON STUDIED BY X-RAY INTERFEROMETRY AND TOPOGRAPHY

被引：11

作者：

GERWARD, L

机构：

来源：

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1978年 / 37卷 / 01期

关键词：

D O I：

10.1080/01418617808239164

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：95 / 106

页数：12

共 24 条

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[2] AN X-RAY INTERFEROMETER [J].

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APPLIED PHYSICS LETTERS, 1971, 18 (12) :581-&

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[8] A STUDY OF STRAINS IN ABRADED DIAMOND SURFACES [J].

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LAWN, BR ;

LANG, AR ;

WILKS, EM .

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[9] X-RAY STUDY OF LATERAL STRAINS IN ION-IMPLANTED SILICON [J].

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[10] DIRECT OBSERVATIONS OF DEFECTS IN IMPLANTED AND POST-ANNEALED SILICON WAFERS [J].

GLOWINSKI, LD ;

TU, KN ;

HO, PS .

APPLIED PHYSICS LETTERS, 1976, 28 (06) :312-313

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