NEUTRON AND X-RAY-DIFFRACTION INVESTIGATIONS OF SILICON IMPLANTED BY PHOSPHORUS IONS

被引：10

作者：

EICHHORN, F ^{[1
]}

机构：

[1] DAWB,ZENT INST KERN FORSCH,ROSSENDORF,GER DEM REP

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1975年 / 30卷 / 01期

关键词：

D O I：

10.1002/pssa.2210300116

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：155 / 162

页数：8

共 25 条

[1]

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BICKNELL, RW .

PHILOSOPHICAL MAGAZINE, 1972, 26 (02) :273-&

[4] X-RAY INVESTIGATION OF LATTICE DEFORMATIONS IN SILICON INDUCED THROUGH HIGH-ENERGY ION IMPLANTATION [J].

BONSE, U ;

HART, M ;

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[5] PROTON BOMBARDMENT DAMAGE IN SILICON [J].

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[6] EXPERIMENTAL AND THEORETICAL INVESTIGATIONS OF DYNAMICAL NEUTRON DIFFRACTION BY USING CRYSTALS WITH A LOW DISLOCATION DENSITY [J].

EICHHORN, F ;

KOSMOWSKI, M ;

SCHOPF, HG ;

SCHULZE, GER .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1971, 4 (02) :445-+

[7] X-RAY STUDY OF LATERAL STRAINS IN ION-IMPLANTED SILICON [J].

GERWARD, L .

ZEITSCHRIFT FUR PHYSIK, 1973, 259 (04) :313-322

[8]

JAMES RW, 1963, SOLID STATE PHYS, V15, P53

[9] DYNAMICAL NEUTRON-DIFFRACTION BY IDEALLY CURVED CRYSTALS [J].

KLAR, B ;

RUSTICHE.F .

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS, 1973, B 13 (02) :249-271

[10]

Laue M, 1960, RONTGENSTRAHLINTERFE

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