MONTE-CARLO MODELING OF ION-BEAM-ASSISTED-DEPOSITION - APPLICATION TO DIAMOND-LIKE CARBON

被引:15
作者
ROSSI, F [1 ]
ANDRE, B [1 ]
机构
[1] COMMISS EUROPEAN COMMUNITIES,JOINT RES CTR,POB 2,1755 ZG PETTEN,NETHERLANDS
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 03期
关键词
THIN FILMS; ION BOMBARDMENT; ION BEAM ASSISTED DEPOSITION; DIAMOND; CARBON; MONTE-CARLO; SIMULATION; IRRADIATION;
D O I
10.1143/JJAP.31.872
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have performed a Monte Carlo simulation of the growth of a carbon film under ion bombardment, taking into account a preferential displacement of atoms in the film depending on their hybridization state. The size of the cascade and the number of displacements in the solid are calculated depending on the concentration in diamond-type chemical bonds (sp3) or graphite-type chemical bonds (sp2). These values are used in a Monte Carlo code which calculates the local changes in concentration in sp3 sites and sp2 sites due to the effect of the cascades. The effect of the ion energy and the ratio between ions and atoms fluxes is studied. A comparison is made with experimental results where diamondlike carbon films are obtained under Ar+ and Xe+ irradiations. Good qualitative agreement is obtained between the properties of the film measured and the results of the model.
引用
收藏
页码:872 / 879
页数:8
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