0.10-MU-M GRADED INGAAS CHANNEL INP HEMT WITH 305-GHZ FT AND 340-GHZ FMAX

被引：61

作者：

WOJTOWICZ, M

LAI, R

STREIT, DC

NG, GI

BLOCK, TR

TAN, KL

LIU, PH

FREUDENTHAL, AK

DIA, RM

机构：

[1] TRW Inc., Redondo Beach

来源：

IEEE ELECTRON DEVICE LETTERS | 1994年 / 15卷 / 11期

关键词：

D O I：

10.1109/55.334673

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report here 305 GHz f(T), 340 GHz f(max), and 1550 mS/mm extrinsic g(m) from a 0.10 mum In(x)Ga1-xAs/In0.52Al0.48As/InP HEMT with x graded from 0.60 to 0.80. This device has the highest f(T) yet reported for a 0.10 mum gate length and the highest combination of f(T) and f(max) reported for any three-terminal device. This performance is achieved by using a graded-channel design which simultaneously increases the effective indium composition of the channel while optimizing channel thickness.

引用

页码：477 / 479

页数：3

共 10 条

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[2]

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