共 9 条
[2]
THE DELTA-DOPED IN0.25GA0.75AS/GAAS PSEUDOMORPHIC HIGH ELECTRON-MOBILITY TRANSISTOR STRUCTURES PREPARED BY LOW-PRESSURE METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1991, 30 (06)
:1158-1163
[4]
HUGHES WA, IEEE T ELECTRON DEV, V34, P1617
[6]
MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/S0022-0248(74)80055-2
[7]
Osboum G.C., 1987, SEMICONDUCT SEMIMET, V24, P459, DOI [10.1016/S0080-8784(08)62455-2, DOI 10.1016/S0080-8784(08)62455-2]