SELECTIVELY DELTA-DOPED QUANTUM WELL TRANSISTOR GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

被引：40

作者：

KUO, TY

CUNNINGHAM, JE

SCHUBERT, EF

TSANG, WT

CHIU, TH

REN, F

FONSTAD, CG

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

[2] MIT,CAMBRIDGE,MA 02139

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 06期

关键词：

D O I：

10.1063/1.341513

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3324 / 3327

页数：4

共 12 条

[1]

Chen Y. K., 1987, Gallium Arsenide and Related Compounds 1986. Proceedings of the Thirteenth International Symposium, P581

[2] QUANTUM SIZE EFFECT IN MONOLAYER-DOPED HETEROSTRUCTURES [J].

CUNNINGHAM, JE ;

TSANG, WT ;

TIMP, G ;

SCHUBERT, EF ;

CHANG, AM ;

OWUSUSEKYERE, K .

PHYSICAL REVIEW B, 1988, 37 (08) :4317-4320

[3] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J].

DINGLE, R ;

STORMER, HL ;

GOSSARD, AC ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1978, 33 (07) :665-667

[4]

DINGLE R, 1985, VLSI ELECTRONICS, P216

[5] SIMPLE EMPIRICAL RELATIONSHIP BETWEEN MOBILITY AND CARRIER CONCENTRATION [J].

HILSUM, C .

ELECTRONICS LETTERS, 1974, 10 (13) :259-260

[6] HIGH ELECTRON-MOBILITY TRANSISTOR LOGIC [J].

MIMURA, T ;

JOSHIN, K ;

HIYAMIZU, S ;

HIKOSAKA, K ;

ABE, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (08) :L598-L600

[7] ONE ATOMIC LAYER HETEROINTERFACE FLUCTUATIONS IN GAAS-ALAS QUANTUM WELL STRUCTURES AND THEIR SUPPRESSION BY INSERTION OF SMOOTHING PERIOD IN MOLECULAR-BEAM EPITAXY [J].

SAKAKI, H ;

TANAKA, M ;

YOSHINO, J .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (06) :L417-L420

[8] ELECTRONIC STATES IN SELECTIVELY SI-DOPED N-ALGAAS/GAAS/N-ALGAAS SINGLE QUANTUM WELL STRUCTURES GROWN BY MBE [J].

SASA, S ;

SAITO, J ;

NANBU, K ;

ISHIKAWA, T ;

HIYAMIZU, S ;

INOUE, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (04) :L281-L283

[9]

SCHUBERT EF, 1988, APPL PHYS LETT, V52, P1510

[10] MODULATION-DOPED GAAS/ALGAAS HETEROJUNCTION FIELD-EFFECT TRANSISTORS (MODFETS), ULTRAHIGH-SPEED DEVICE FOR SUPERCOMPUTERS [J].

SOLOMON, PM ;

MORKOC, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) :1015-1027

← 1 2 →