QUANTUM SIZE EFFECT IN MONOLAYER-DOPED HETEROSTRUCTURES

[1] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667

[2] CONCENTRATION OF ELECTRONS IN SELECTIVELY DOPED GAALAS/GAAS HETEROJUNCTION AND ITS DEPENDENCE ON SPACER-LAYER THICKNESS AND GATE ELECTRIC-FIELD [J]. APPLIED PHYSICS LETTERS, 1984, 45 (03) : 253 - 255

[3] IMPROVED ELECTRON-MOBILITY HIGHER THAN 106 CM2/VS IN SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MBE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10): : L609 - L611

[4] HIGH-MOBILITY TWO-DIMENSIONAL ELECTRON-GAS FROM DELTA-DOPED ASYMMETRIC ALXGA1-XAS/GAAS/ALYGA1-YAS QUANTUM-WELLS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1987, 26 (02): : 263 - 266

[5] IMPROVEMENT OF TWO-DIMENSIONAL ELECTRON-GAS CONCENTRATION IN SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES BY ATOMIC PLANAR DOPING [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) : 1937 - 1940

[6] LEE K, 1983, J APPL PHYS, V54, P11

[7] LIGHT-SCATTERING DETERMINATION OF BAND OFFSETS IN GAAS-ALXGA1-XAS QUANTUM-WELLS [J]. PHYSICAL REVIEW B, 1986, 33 (12): : 8863 - 8866

[8] ELECTRON-TRANSPORT IN POLAR HETEROLAYERS [J]. SURFACE SCIENCE, 1982, 113 (1-3) : 199 - 210

[9] THE DELTA-DOPED FIELD-EFFECT TRANSISTOR (DELTA-FET) [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) : 625 - 632

[10] STORMER HL, 1982, SOLID STATE COMMUN, V41, P701

[1] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667

[2] CONCENTRATION OF ELECTRONS IN SELECTIVELY DOPED GAALAS/GAAS HETEROJUNCTION AND ITS DEPENDENCE ON SPACER-LAYER THICKNESS AND GATE ELECTRIC-FIELD [J]. APPLIED PHYSICS LETTERS, 1984, 45 (03) : 253 - 255

[3] IMPROVED ELECTRON-MOBILITY HIGHER THAN 106 CM2/VS IN SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MBE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10): : L609 - L611

[4] HIGH-MOBILITY TWO-DIMENSIONAL ELECTRON-GAS FROM DELTA-DOPED ASYMMETRIC ALXGA1-XAS/GAAS/ALYGA1-YAS QUANTUM-WELLS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1987, 26 (02): : 263 - 266

[5] IMPROVEMENT OF TWO-DIMENSIONAL ELECTRON-GAS CONCENTRATION IN SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES BY ATOMIC PLANAR DOPING [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) : 1937 - 1940

[6] LEE K, 1983, J APPL PHYS, V54, P11

[7] LIGHT-SCATTERING DETERMINATION OF BAND OFFSETS IN GAAS-ALXGA1-XAS QUANTUM-WELLS [J]. PHYSICAL REVIEW B, 1986, 33 (12): : 8863 - 8866

[8] ELECTRON-TRANSPORT IN POLAR HETEROLAYERS [J]. SURFACE SCIENCE, 1982, 113 (1-3) : 199 - 210

[9] THE DELTA-DOPED FIELD-EFFECT TRANSISTOR (DELTA-FET) [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) : 625 - 632

[10] STORMER HL, 1982, SOLID STATE COMMUN, V41, P701