ION-BEAM ANNEALED AS+ IMPLANTED SILICON

被引：4

作者：

HEMMENT, PLF ^{[1
]}

MAYDELLONDRUSZ, E ^{[1
]}

SCOVELL, PD ^{[1
]}

机构：

[1] STAND TELECOMMUN LABS LTD,HARLOW CM17 9NA,ESSEX,ENGLAND

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 02期

关键词：

D O I：

10.1049/el:19820040

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：57 / 59

页数：3

共 9 条

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ANTONIADIS, DA ;

DUTTON, RW .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) :412-422

[2]

FINETTI M, 1981, SEP ESSDERC 81 TOUL

[3]

GIBBONS JF, 1981, LASERS ELECTRON BEAM

[4] SAMPLE CONTAMINATION CAUSED BY SPUTTERING DURING ION-IMPLANTATION [J].

HEMMENT, PLF .

VACUUM, 1979, 29 (11-1) :439-442

[5] ION-BEAM ANNEALING OF SEMICONDUCTORS [J].

HODGSON, RT ;

BAGLIN, JEE ;

PAL, R ;

NERI, JM ;

HAMMER, DA .

APPLIED PHYSICS LETTERS, 1980, 37 (02) :187-189

[6]

POLLARD CJ, 1981, SEP ESSDERC 81 TOUL

[7] ACTIVATION OF ARSENIC-IMPLANTED SILICON USING AN INCOHERENT-LIGHT SOURCE [J].

POWELL, RA ;

YEP, TO ;

FULKS, RT .

APPLIED PHYSICS LETTERS, 1981, 39 (02) :150-152

[8]

SCOVELL PD, 1981, SEP ESSDERC 81 TOUL

[9]

SURRIDGE RK, 1977, I PHYS C SER A, V33, P161

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