SINGLE ELECTRON CALCULATIONS FOR THE SI L2,3 NEAR EDGE STRUCTURE

被引：37

作者：

WENG, XD

REZ, P

BATSON, PE

机构：

[1] ARIZONA STATE UNIV,DEPT PHYS,TEMPE,AZ 85287

[2] ARIZONA STATE UNIV,DEPT SOLID STATE SCI,TEMPE,AZ 85287

[3] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

SOLID STATE COMMUNICATIONS | 1990年 / 74卷 / 09期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0038-1098(90)90476-R

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We show, for the first time, that the near edge structure of the crystalline silicon L2, 3 edge in absorption spectroscopy at an energy resolution of 0.3 eV can be largely explained without invoking many-body effects, or core excitons. Previous attempts to compare experimental results with total density of final states, without matrix element weighting, have lead to erroneous interpretations. © 1990.

引用

收藏

页码：1013 / 1015

页数：3

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