MEASUREMENT OF RICHARDSON CONSTANT OF GAAS SCHOTTKY BARRIERS

[1] GALLIUM-ARSENIDE SURFACE FILM EVALUATION BY ELLIPSOMETRY AND ITS EFFECT ON SCHOTTKY BARRIERS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (03) : 408 - 414

[2] TRANSPORT PROPERTIES OF METAL-SILICON SCHOTTKY BARRIERS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (06) : 749 - +

[3] ELECTRICAL CHARACTERISTICS OF GAAS MIS SCHOTTKY DIODES [J]. SOLID-STATE ELECTRONICS, 1979, 22 (07) : 621 - 631

[4] RICHARDSON CONSTANT OF AL-GAAS AND AU-GAAS SCHOTTKY-BARRIER DIODES [J]. APPLIED PHYSICS LETTERS, 1977, 30 (03) : 169 - 172

[5] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) : 1589 - +

[6] CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (11-1) : 1035 - &

[7] GOLDBERG YA, 1975, SOV PHYS SEMICOND+, V9, P337

[8] HIGH-TEMPERATURE ANNEALING BEHAVIOR OF SCHOTTKY BARRIERS ON GAAS WITH GOLD AND GOLD-GALLIUM CONTACTS [J]. SOLID-STATE ELECTRONICS, 1977, 20 (05) : 431 - &

[9] ELECTRICAL PROPERTIES OF NICKEL-LOW-DOPED N-TYPE GALLIUM-ARSENIDE SCHOTTKY-BARRIER DIODES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (12) : 1231 - +

[10] AU-N-TYPE GAAS SCHOTTKY BARRIER + ITS VARACTOR APPLICATION [J]. BELL SYSTEM TECHNICAL JOURNAL, 1964, 43 (1P1): : 215 - +

[1] GALLIUM-ARSENIDE SURFACE FILM EVALUATION BY ELLIPSOMETRY AND ITS EFFECT ON SCHOTTKY BARRIERS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (03) : 408 - 414

[2] TRANSPORT PROPERTIES OF METAL-SILICON SCHOTTKY BARRIERS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (06) : 749 - +

[3] ELECTRICAL CHARACTERISTICS OF GAAS MIS SCHOTTKY DIODES [J]. SOLID-STATE ELECTRONICS, 1979, 22 (07) : 621 - 631

[4] RICHARDSON CONSTANT OF AL-GAAS AND AU-GAAS SCHOTTKY-BARRIER DIODES [J]. APPLIED PHYSICS LETTERS, 1977, 30 (03) : 169 - 172

[5] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) : 1589 - +

[6] CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (11-1) : 1035 - &

[7] GOLDBERG YA, 1975, SOV PHYS SEMICOND+, V9, P337

[8] HIGH-TEMPERATURE ANNEALING BEHAVIOR OF SCHOTTKY BARRIERS ON GAAS WITH GOLD AND GOLD-GALLIUM CONTACTS [J]. SOLID-STATE ELECTRONICS, 1977, 20 (05) : 431 - &

[9] ELECTRICAL PROPERTIES OF NICKEL-LOW-DOPED N-TYPE GALLIUM-ARSENIDE SCHOTTKY-BARRIER DIODES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (12) : 1231 - +

[10] AU-N-TYPE GAAS SCHOTTKY BARRIER + ITS VARACTOR APPLICATION [J]. BELL SYSTEM TECHNICAL JOURNAL, 1964, 43 (1P1): : 215 - +