CHARACTERIZATION OF ELECTRON TRAPS IN SIO2 AS INFLUENCED BY PROCESSING PARAMETERS

被引：40

作者：

YOUNG, DR

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 06期

关键词：

D O I：

10.1063/1.329259

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4090 / 4094

页数：5

共 13 条

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