LOW INPUT CAPACITANCE VOLTAGE FOLLOWER IN A COMPATIBLE SILICON-GATE MOS-BIPOLAR TECHNOLOGY

被引：4

作者：

DEMAN, HJ ^{[1
]}

VANPARYS, RA ^{[1
]}

CUPPENS, R ^{[1
]}

机构：

[1] CATHOLIC UNIV LEUVEN,ELECTR SYST AUTOMATIZAT & TECH LAB,B-3030 HEVERLE,BELGIUM

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1977年 / 12卷 / 03期

关键词：

D O I：

10.1109/JSSC.1977.1050881

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：217 / 224

页数：8

共 19 条

[1]

BUTLER JR, 1973, 1973 ISSCC DIG TECH, P138

[2]

CAVE DL, QUAD JFET WIDEBAND O

[3] EFFECTS OF TRICHLOROETHYLENE-OXIDATION ON CHARACTERISTICS OF MOS DEVICES [J].

DECLERCK, GJ ;

HATTORI, T ;

MAY, GA ;

BEAUDOUIN, J ;

MEINDL, JD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) :436-439

[4] EXPERIMENTAL RESULTS ON 3-PHASE POLYSILICON CCDS WITH A TCE-SIO2-SI3N4 GATE INSULATOR [J].

DECLERCK, GJ ;

DEMEYER, KM ;

JANSSENS, EJ ;

LAES, EE ;

VANDERSPIEGEL, J .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1976, 11 (01) :229-231

[5]

DECLERCK GJ, 1976, SPR M EL SOC WASH, P299

[6]

DEMAN H, TO BE PUBLISHED

[7]

DEMAN H, 1973, 1973 ISSCC DIG TECH, P150

[8]

Geddes L. A., 1972, ELECTRODES MEASUREME

[9]

GREAME J, 1971, OPERATIONAL AMPLIFIE, P54

[10]

GULD C, 1974, IEE MEDICAL ELECTRON

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