EXPERIMENTAL RESULTS ON 3-PHASE POLYSILICON CCDS WITH A TCE-SIO2-SI3N4 GATE INSULATOR

被引：4

作者：

DECLERCK, GJ ^{[1
]}

DEMEYER, KM ^{[1
]}

JANSSENS, EJ ^{[1
]}

LAES, EE ^{[1
]}

VANDERSPIEGEL, J ^{[1
]}

机构：

[1] KATHOLIEKE UNIV LEUVEN, DEPT ELEKTROTECH, LAB FYS & ELEKTR HALFGELEIDERS, B-3030 HEVERLE, BELGIUM

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1976年 / 11卷 / 01期

关键词：

D O I：

10.1109/JSSC.1976.1050703

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：229 / 231

页数：3

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