ELECTRONIC-STRUCTURE AND DYNAMIC BEHAVIOR OF DIFFERENT BOUND-EXCITON COMPLEXES IN ZNSE BULK CRYSTALS

被引：9

作者：

KUDLEK, GH

POHL, UW

FRICKE, C

HEITZ, R

HOFFMANN, A

GUTOWSKI, J

BROSER, I

机构：

[1] Institut für Festkörperphysik, Technische Universität Berlin

来源：

PHYSICA B | 1993年 / 185卷 / 1-4期

关键词：

D O I：

10.1016/0921-4526(93)90255-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

High-quality ZnSe crystals grown by the high-pressure Bridgman method show emissions of the free exciton (X) in the excitonic energy range as well as bound exciton lines I1 and I2. The I2i-lines, which are observed in excitation spectra of the (D0, X)-complex, are explained taking into account a three-particle model with excited \n, l] hole states for the (D0, X)-complex. Otherwise the (A0, X) ground state is split by the (j, j)-coupling of the two GAMMA8-holes into two separate levels. From time-resolved luminescence the specified rise and decay times of different bound excitons complexes are determined.

引用

页码：325 / 331

页数：7

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