WNX - PROPERTIES AND APPLICATIONS

[21] TANDON JL, 1986, P WORKSHOP TUNGSTEN, P331

[22] TITANIUM NITRIDE LOCAL INTERCONNECT TECHNOLOGY FOR VLSI [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (03) : 682 - 688

[23] TING CY, 1984, 2ND P INT S VLSI SCI, P397

[24] A 2K-GATE GAAS GATE ARRAY WITH A WN GATE SELF-ALIGNMENT FET PROCESS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1985, 20 (05) : 1043 - 1049

[25] ALUMINUM-SILICIDE REACTIONS .1. DIFFUSION, COMPOUND FORMATION, AND MICROSTRUCTURE [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) : 6915 - 6922

[21] TANDON JL, 1986, P WORKSHOP TUNGSTEN, P331

[22] TITANIUM NITRIDE LOCAL INTERCONNECT TECHNOLOGY FOR VLSI [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (03) : 682 - 688

[23] TING CY, 1984, 2ND P INT S VLSI SCI, P397

[24] A 2K-GATE GAAS GATE ARRAY WITH A WN GATE SELF-ALIGNMENT FET PROCESS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1985, 20 (05) : 1043 - 1049

[25] ALUMINUM-SILICIDE REACTIONS .1. DIFFUSION, COMPOUND FORMATION, AND MICROSTRUCTURE [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) : 6915 - 6922