A NOVEL 3-STEP PROCESS FOR LOW-DEFECT-DENSITY SILICON ON SAPPHIRE

被引：15

作者：

AMANO, J

CAREY, K

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 02期

关键词：

D O I：

10.1063/1.92648

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：163 / 165

页数：3

共 9 条

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BUIOCCHI, CJ .

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[2]

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[3] IMPROVEMENT OF CRYSTALLINE QUALITY OF EPITAXIAL SILICON-ON-SAPPHIRE BY ION-IMPLANTATION AND FURNACE REGROWTH [J].

GOLECKI, I ;

NICOLET, MA .

SOLID-STATE ELECTRONICS, 1980, 23 (07) :803-806

[4] CRYSTALLINE DISORDER REDUCTION AND DEFECT-TYPE CHANGE IN SILICON ON SAPPHIRE FILMS BY SILICON IMPLANTATION AND SUBSEQUENT THERMAL ANNEALING [J].

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YOSHII, T .

APPLIED PHYSICS LETTERS, 1980, 36 (01) :64-66

[5]

KULKARNI SB, 1979, FAL ESC M LOS ANG

[6] IMPROVEMENT OF CRYSTALLINE QUALITY OF EPITAXIAL SI LAYERS BY ION-IMPLANTATION TECHNIQUES [J].

LAU, SS ;

MATTESON, S ;

MAYER, JW ;

REVESZ, P ;

GYULAI, J ;

ROTH, J ;

SIGMON, TW ;

CASS, T .

APPLIED PHYSICS LETTERS, 1979, 34 (01) :76-78

[7] IMAGING OF THE SILICON ON SAPPHIRE INTERFACE BY HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY [J].

PONCE, FA ;

ARANOVICH, J .

APPLIED PHYSICS LETTERS, 1981, 38 (06) :439-441

[8] ELECTRICAL-PROPERTIES OF SILICON-IMPLANTED FURNACE-ANNEALED SILICON-ON-SAPPHIRE DEVICES [J].

ROULET, ME ;

SCHWOB, P ;

GOLECKI, I ;

NICOLET, MA .

ELECTRONICS LETTERS, 1979, 15 (17) :527-529

[9]

Winterbon K.B., 1975, ION IMPLANTATION RAN, V2

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