ELECTRON-TUNNELING IN SI-SIO2-AL STRUCTURES - A COMPARISON BETWEEN 100 ORIENTED AND 111 ORIENTED SI

被引：14

作者：

KRIEGER, G

SWANSON, RM

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 10期

关键词：

D O I：

10.1063/1.92569

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：818 / 819

页数：2

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共 4 条

[1] FOWLER-NORDHEIM ELECTRON-TUNNELING IN THIN SI-SIO2-AL STRUCTURES [J].

KRIEGER, G ;

SWANSON, RM .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) :5710-5717

[2] FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2 [J].

LENZLINGER, M ;

SNOW, EH .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) :278-+

[3] ELECTRICAL-CONDUCTION AND DIELECTRIC BREAKDOWN IN SILICON DIOXIDE FILMS ON SILICON [J].

OSBURN, CM ;

WEITZMAN, EJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (05) :603-+

[4] DIFFERENTIAL STUDIES OF DUAL-DIELECTRIC CHARGE-STORAGE CELLS [J].

THORNBER, KK ;

KAHNG, D ;

BOULIN, DM ;

NEPPELL, CT ;

SUNDBURG, WJ .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :4047-4063