CHEMICAL ETCHING OF SILICON BY CO2-LASER-INDUCED DISSOCIATION OF NF3

被引：12

作者：

BRANNON, JH

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1988年 / 46卷 / 01期

关键词：

D O I：

10.1007/BF00615136

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：39 / 50

页数：12

共 41 条

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