TECHNIQUE FOR CORRECTION OF PULSE HEIGHTS FROM THICK SILICON PARTICLE DETECTORS

被引：2

作者：

ALLEN, KJF ^{[1
]}

KLEIN, AG ^{[1
]}

机构：

[1] UNIV MELBOURNE,SCH PHYS,PARKVILLE,AUSTRALIA

来源：

NUCLEAR INSTRUMENTS & METHODS | 1973年 / 108卷 / 02期

关键词：

D O I：

10.1016/0029-554X(73)90605-8

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：309 / 315

页数：7

共 11 条

[1]

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[2]

ASKIN HJ, IN PRESS

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FINK, CL .

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NUCLEAR INSTRUMENTS & METHODS, 1969, 72 (01) :35-&

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HANNA, SS .

PHYSICS LETTERS B, 1969, B 30 (05) :337-&

[6]

KOWALSKI E, 1970, NUCLEAR ELECTRONICS, pCH2

[7] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J].

MORIN, FJ ;

MAITA, JP .

PHYSICAL REVIEW, 1954, 96 (01) :28-35

[8]

NODELMAN HM, 1956, MATHEMATICS ELECTRON

[9]

SHODA M, 1969, PHYS REV LETTERS, V23, P800

[10] PULSE RISE TIMES OF SILICON SURFACE BARRIER DETECTORS [J].

TOVE, PA ;

SEIBT, W ;

LEITZ, W .

NUCLEAR INSTRUMENTS & METHODS, 1967, 51 (02) :304-+

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