PULSE RISE TIMES OF SILICON SURFACE BARRIER DETECTORS

[1] BROWN WL, 1961, IRE T NUCL SCI, VNS8, P2

[2] INFLUENCE OF NON-CONSTANT CARRIER MOBILITY ON CHARGE TRANSPORT TIME IN SEMICONDUCTOR DETECTORS [J]. NUCLEAR INSTRUMENTS & METHODS, 1965, 34 (01): : 157 - &

[3] GUTBERLETVIEWEG F, 1964, ARCHIV TECHN MESSEN, V339, P81

[4] LEWIS IAD, 1959, MILLIMICROSECOND TEC, P316

[5] DETERMINATION OF TRANSIENT RESPONSE OF SEMICONDUCTOR DETECTORS BY USE OF NANOSECOND-PULSE ELECTRON ACCELERATOR [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1964, NS11 (03) : 271 - +

[6] CHARGE COLLECTION IN CERTAIN TYPES OF SEMICONDUCTOR RADIATION DETECTORS [J]. NUCLEAR INSTRUMENTS & METHODS, 1966, 40 (01): : 177 - +

[7] THE FIELD-DEPENDENCE OF CARRIER MOBILITY IN SILICON AND GERMANIUM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 12 (02) : 175 - 180

[8] MOBILITY OF HOLES AND ELECTRONS IN HIGH ELECTRIC FIELDS [J]. PHYSICAL REVIEW, 1953, 90 (05): : 766 - 769

[9] PULSE FORMATION AND TRANSIT TIME OF CHARGE CARRIERS IN SEMICONDUCTOR JUNCTION DETECTORS [J]. NUCLEAR INSTRUMENTS & METHODS, 1964, 29 (01): : 66 - 68

[10] TRANSIT TIME OF CHARGE CARRIERS IN THE SEMICONDUCTOR IONIZATION CHAMBER [J]. NUCLEAR INSTRUMENTS & METHODS, 1961, 12 (02): : 278 - 290

[1] BROWN WL, 1961, IRE T NUCL SCI, VNS8, P2

[2] INFLUENCE OF NON-CONSTANT CARRIER MOBILITY ON CHARGE TRANSPORT TIME IN SEMICONDUCTOR DETECTORS [J]. NUCLEAR INSTRUMENTS & METHODS, 1965, 34 (01): : 157 - &

[3] GUTBERLETVIEWEG F, 1964, ARCHIV TECHN MESSEN, V339, P81

[4] LEWIS IAD, 1959, MILLIMICROSECOND TEC, P316

[5] DETERMINATION OF TRANSIENT RESPONSE OF SEMICONDUCTOR DETECTORS BY USE OF NANOSECOND-PULSE ELECTRON ACCELERATOR [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1964, NS11 (03) : 271 - +

[6] CHARGE COLLECTION IN CERTAIN TYPES OF SEMICONDUCTOR RADIATION DETECTORS [J]. NUCLEAR INSTRUMENTS & METHODS, 1966, 40 (01): : 177 - +

[7] THE FIELD-DEPENDENCE OF CARRIER MOBILITY IN SILICON AND GERMANIUM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 12 (02) : 175 - 180

[8] MOBILITY OF HOLES AND ELECTRONS IN HIGH ELECTRIC FIELDS [J]. PHYSICAL REVIEW, 1953, 90 (05): : 766 - 769

[9] PULSE FORMATION AND TRANSIT TIME OF CHARGE CARRIERS IN SEMICONDUCTOR JUNCTION DETECTORS [J]. NUCLEAR INSTRUMENTS & METHODS, 1964, 29 (01): : 66 - 68

[10] TRANSIT TIME OF CHARGE CARRIERS IN THE SEMICONDUCTOR IONIZATION CHAMBER [J]. NUCLEAR INSTRUMENTS & METHODS, 1961, 12 (02): : 278 - 290