EXPERIMENTAL-MEASUREMENT OF THE FREQUENCY-DEPENDENT MEMORY FUNCTION FOR THE 2D ELECTRON-GAS IN SI INVERSION-LAYERS

被引:6
作者
ALLEN, SJ
WILSON, BA
TSUI, DC
GOLD, A
GOTZE, W
机构
[1] MAX PLANCK INST PHYS & ASTROPHYS,D-8000 MUNICH 40,FED REP GER
[2] TECH UNIV MUNICH,DEPT PHYS,D-8046 GARCHING,FED REP GER
关键词
D O I
10.1016/0039-6028(82)90587-8
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:211 / 217
页数:7
相关论文
共 22 条
[1]   FREQUENCY-DEPENDENCE OF SURFACE CYCLOTRON-RESONANCE IN SI [J].
ABSTREITER, G ;
KOCH, JF ;
GOY, P ;
COUDER, Y .
PHYSICAL REVIEW B, 1976, 14 (06) :2494-2497
[2]  
ABSTREITER G, 1976, PHYS REV B, V14, P2480, DOI 10.1103/PhysRevB.14.2480
[3]   THE TEMPERATURE-DEPENDENCE OF THE DC CONDUCTIVITY NEAR THE ANDERSON TRANSITION IN 3-DIMENSIONAL SYSTEMS [J].
BELITZ, D ;
GOTZE, W .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1981, 43 (03) :517-526
[4]   INTERACTION-INDUCED TRANSITION AT LOW-DENSITIES IN SILICON INVERSION LAYER [J].
BLOSS, WL ;
SHAM, LJ ;
VINTER, V .
PHYSICAL REVIEW LETTERS, 1979, 43 (20) :1529-1532
[5]   EVIDENCE FOR A VALLEY-OCCUPANCY TRANSITION IN SI INVERSION-LAYERS AT LOW ELECTRON-DENSITIES [J].
COLE, T ;
MCCOMBE, BD ;
QUINN, JJ ;
KALIA, RK .
PHYSICAL REVIEW LETTERS, 1981, 46 (16) :1096-1099
[6]   MANY-BODY EFFECT ON LEVEL BROADENING AND CYCLOTRON-RESONANCE IN 2-DIMENSIONAL SYSTEMS UNDER STRONG MAGNETIC-FIELD [J].
FUKUYAMA, H ;
KURAMOTO, Y ;
PLATZMAN, PM .
PHYSICAL REVIEW B, 1979, 19 (10) :4980-4985
[7]   TEMPERATURE-DEPENDENCE OF DYNAMIC CONDUCTIVITY OF ELECTRONS IN SURFACE INVERSION LAYER OF SEMICONDUCTING SILICON [J].
GANGULY, AK ;
TING, CS .
PHYSICAL REVIEW B, 1977, 16 (08) :3541-3545
[8]  
GOLD A, UNPUB J PHYS C
[9]   THE MOBILITY OF A QUANTUM PARTICLE IN A 3-DIMENSIONAL RANDOM POTENTIAL [J].
GOTZE, W .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1981, 43 (02) :219-250
[10]   THEORY FOR THE CONDUCTIVITY OF A FERMION GAS MOVING IN A STRONG 3-DIMENSIONAL RANDOM POTENTIAL [J].
GOTZE, W .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (07) :1279-1296