EVIDENCE FOR ASSOCIATED DEEP DONOR SHALLOW ACCEPTOR PAIR RECOMBINATION FOR THE EL2 EMISSION BAND IN GAAS

被引：7

作者：

SHANABROOK, BV

KLEIN, PB

BISHOP, SG

机构：

来源：

PHYSICA B & C | 1983年 / 117卷 / MAR期

关键词：

D O I：

10.1016/0378-4363(83)90473-4

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：173 / 175

页数：3

共 13 条

[1] STOICHIOMETRY-CONTROLLED COMPENSATION IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].

HOLMES, DE ;

CHEN, RT ;

ELLIOTT, KR ;

KIRKPATRICK, CG .

APPLIED PHYSICS LETTERS, 1982, 40 (01) :46-48

[2]

JOHNSON EJ, 1982, APPL PHYS LETT, V40, P11

[3]

KILLORAN N, UNPUB J PHYS C

[4] ORIGIN OF THE 0.82-EV ELECTRON TRAP IN GAAS AND ITS ANNIHILATION BY SHALLOW DONORS [J].

LAGOWSKI, J ;

GATOS, HC ;

PARSEY, JM ;

WADA, K ;

KAMINSKA, M ;

WALUKIEWICZ, W .

APPLIED PHYSICS LETTERS, 1982, 40 (04) :342-344

[5] QUENCHING EFFECT OF LUMINESCENCE IN BULK SEMI-INSULATING GAAS [J].

LEYRAL, P ;

VINCENT, G ;

NOUAILHAT, A ;

GUILLOT, G .

SOLID STATE COMMUNICATIONS, 1982, 42 (01) :67-69

[6] OPTICAL ASSESSMENT OF THE MAIN ELECTRON TRAP IN BULK SEMI-INSULATING GAAS [J].

MARTIN, GM .

APPLIED PHYSICS LETTERS, 1981, 39 (09) :747-748

[7] A LUMINESCENCE BAND ASSOCIATED WITH THE MAIN ELECTRON TRAP IN BULK GALLIUM-ARSENIDE [J].

MIRCEAROUSSEL, A ;

MAKRAMEBEID, S .

APPLIED PHYSICS LETTERS, 1981, 38 (12) :1007-1009

[8]

ODONNELL KP, UNPUB

[9]

SHANABROOK BV, 1982, P DEEP LEVELS 3 5 SE

[10]

SHANABROOK BV, UNPUB J APPL PHYS

← 1 2 →