BARRIER CAPACITANCE AND BUILT-IN VOLTAGE OF TUNNEL DIODES

被引：3

作者：

ARIZUMI, T

YOSHIDA, A

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1968年 / 7卷 / 07期

关键词：

D O I：

10.1143/JJAP.7.748

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：748 / &

共 10 条

[1] JUNCTION POTENTIAL STUDIES IN TUNNEL DIODES [J].

BERNARD, W ;

ROTH, H ;

SCHMID, AP ;

ZELDES, P .

PHYSICAL REVIEW, 1963, 131 (02) :627-&

[2] CAPACITANCE OF P-N JUNCTIONS - SPACE-CHARGE CAPACITANCE [J].

CHANG, YF .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (06) :2337-&

[3] INTERNAL FIELD EMISSION AT NARROW SILICON AND GERMANIUM P-N JUNCTIONS [J].

CHYNOWETH, AG ;

FELDMANN, WL ;

LEE, CA ;

LOGAN, RA ;

PEARSON, GL ;

AIGRAIN, P .

PHYSICAL REVIEW, 1960, 118 (02) :425-434

[4] METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM [J].

GOODMAN, AM .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) :329-&

[5] DEPLETION-LAYER CAPACITANCE OF P+N STEP JUNCTIONS [J].

GUMMEL, HK ;

SCHARFET.DL .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (05) :2148-&

[6] ON MATHEMATICAL THEORY OF LINEARLY-GRADED P-N JUNCTION [J].

KENNEDY, DP ;

OBRIEN, RR .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1967, 11 (03) :252-+

[7] SPACE-CHARGE CAPACITANCE OF ASYMMETRIC ABRUPT P-N JUNCTIONS [J].

KLEINKNECHT, HP .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) :3034-+

[8]

MEYERHOFER D, 1962, PHYS REV, V126, P1392

[9]

PENIN NA, 1965, RADIO ENGINEERING EL, V10, P1134

[10] DEGENERATE GERMANIUM .2. BAND GAP AND CARRIER RECOMBINATION [J].

SOMMERS, HS .

PHYSICAL REVIEW, 1961, 124 (04) :1101-&

← 1 →