FORMATION OF THERMALLY STABLE HIGH-RESISTIVITY ALGAAS BY OXYGEN IMPLANTATION

被引：58

作者：

PEARTON, SJ ^{[1
]}

IANNUZZI, MP ^{[1
]}

REYNOLDS, CL ^{[1
]}

PETICOLAS, L ^{[1
]}

机构：

[1] AT&T BELL LABS,READING,PA 19604

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 05期

关键词：

D O I：

10.1063/1.99477

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：395 / 397

页数：3

共 7 条

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BHATTACHARYA, PK ;

SUBRAMANIAN, S .

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[2] THE RELATION OF DOMINANT DEEP LEVELS IN MOCVD ALXGA1-XAS WITH GROWTH-CONDITIONS [J].

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JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :301-304

[3] THE ELECTRICAL CHARACTERISTICS OF ION-IMPLANTED COMPOUND SEMICONDUCTORS [J].

DONNELLY, JP .

NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :553-571

[4]

LANG DV, 1985, DEEP CTR SEMICONDUCT, P489

[5] ION-IMPLANTATION IN GAAS [J].

PEARTON, SJ ;

POATE, JM ;

SETTE, F ;

GIBSON, JM ;

JACOBSON, DC ;

WILLIAMS, JS .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 :369-380

[6] INCREASE IN LUMINESCENCE EFFICIENCY OF ALXGA1-XAS GROWN BY ORGANOMETALLIC VPE [J].

STRINGFELLOW, GB ;

HOM, G .

APPLIED PHYSICS LETTERS, 1979, 34 (11) :794-796

[7]

WALLIS RH, 1981, I PHYS C SER, V56, P73

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