ION-IMPLANTATION IN GAAS

被引：54

作者：

PEARTON, SJ ^{[1
]}

POATE, JM ^{[1
]}

SETTE, F ^{[1
]}

GIBSON, JM ^{[1
]}

JACOBSON, DC ^{[1
]}

WILLIAMS, JS ^{[1
]}

机构：

[1] ROYAL MELBOURNE INST TECHNOL, MELBOURNE, VIC 3000, AUSTRALIA

来源：

关键词：

D O I：

10.1016/S0168-583X(87)80074-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：369 / 380

页数：12

共 65 条

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[2] BARNES PA, 1979, LASER SOLID INTERACT, P647
[3] CHAKRABARTI UK, 1986, MAY EL SOC MA M BOST
[4] CHISTEL LA, 1981, J APPL PHYS, V52, P5080
[5] KINETICS OF IMPLANTATION ENHANCED INTERDIFFUSION OF GA AND AL AT GAAS-GAXAL1-XAS INTERFACES
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[J]. APPLIED PHYSICS LETTERS, 1986, 49 (04) : 223 - 225
[6] COLEMAN JJ, 1982, APPL PHYS LETT, V40, P905
[7] DAVIES DE, 1983, IEEE ELECTR DEVICE L, V4, P356, DOI 10.1109/EDL.1983.25761
[8] COMPENSATION FROM IMPLANTATION IN GAAS
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[9] TRANSIENT THERMAL ANNEALING IN GAAS
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[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) : 387 - 394
[10] DAVIES DE, 1985, MATER RES SOC S P, V45, P261