ION-IMPLANTATION IN GAAS

被引:54
作者
PEARTON, SJ [1 ]
POATE, JM [1 ]
SETTE, F [1 ]
GIBSON, JM [1 ]
JACOBSON, DC [1 ]
WILLIAMS, JS [1 ]
机构
[1] ROYAL MELBOURNE INST TECHNOL, MELBOURNE, VIC 3000, AUSTRALIA
关键词
D O I
10.1016/S0168-583X(87)80074-5
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:369 / 380
页数:12
相关论文
共 65 条
  • [61] Williams J. S., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P209
  • [62] ION-BEAM-INDUCED ANNEALING EFFECTS IN GAAS
    WILLIAMS, JS
    AUSTIN, MW
    [J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 168 (1-3): : 307 - 312
  • [63] WILLIAMS JS, 1985, MATER RES SOC S P, V35, P427
  • [64] WILSON MR, 1985, OCT EL SOC M LAS VEG
  • [65] SELF-COMPENSATION OF DONORS IN HIGH-PURITY GAAS
    WOLFE, CM
    STILLMAN, GE
    [J]. APPLIED PHYSICS LETTERS, 1975, 27 (10) : 564 - 567