JOSEPHSON EDGE-JUNCTION DEVICES USING E-BEAM LITHOGRAPHY

被引：17

作者：

VETTIGER, P

MOORE, DF

FORSTER, T

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 11期

关键词：

D O I：

10.1109/T-ED.1981.20619

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1385 / 1393

页数：9

相关论文

共 27 条

[1] DYNAMICS OF AN ASYMMETRIC NONDESTRUCTIVE READ OUT MEMORY CELL
BEHA, H
[J]. IEEE TRANSACTIONS ON MAGNETICS, 1979, 15 (01) : 424 - 427
[2] Bowden M J, 1979, CRC CRIT R SOLID ST, V8, P223
[3] NIOBIUM OXIDE BARRIER TUNNEL JUNCTION
BROOM, RF
RAIDER, SI
OOSENBRUG, A
DRAKE, RE
WALTER, W
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (10) : 1998 - 2008
[4] SOME TEMPERATURE-DEPENDENT PROPERTIES OF NIOBIUM TUNNEL-JUNCTIONS
BROOM, RF
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) : 5432 - 5439
[5] JOSEPHSON-JUNCTIONS OF SMALL AREA FORMED ON THE EDGES OF NIOBIUM FILMS
BROOM, RF
OOSENBRUG, A
WALTER, W
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (02) : 237 - 239
[6] DAETWYLER K, COMMUNICATION
[7] OFFSET MASKS FOR LIFT-OFF PHOTOPROCESSING
DOLAN, GJ
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 337 - 339
[8] BEHAVIOR OF EDGE-GROWN LOW-CAPACITANCE SUPERCONDUCTING TUNNEL-JUNCTIONS
DOUSSELIN, G
ROSENBLATT, J
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 802 - 804
[9] FORSTER T, 1980, MICROCIRCUIT ENG 80, P475
[10] 1 MU-M MOSFET VLSI TECHNOLOGY .6. ELECTRON-BEAM LITHOGRAPHY
GROBMAN, WD
LUHN, HE
DONOHUE, TP
SPETH, AJ
WILSON, A
HATZAKIS, M
CHANG, THP
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 282 - 290