GOLD AND PLATINUM ACCUMULATION ON BURIED DEFECTS IN SILICON

被引：15

作者：

ROHR, P

GROB, JJ

SIFFERT, P

机构：

[1] Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UPR du CNRS no.292), F-67037 Strasbourg Cedex 2

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1993年 / 80-1卷

关键词：

D O I：

10.1016/0168-583X(93)96199-M

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The kinetics of gold and platinum accumulation on the defects created by MeV Ar+ and C+ implantation in silicon have been determined using Rutherford backscattering and channeling analysis. The time dependence of the gettered metallic impurities amount is shown to obey a conventional differential diffusion equation, including a term related to the driving force due to the strain field of the gettering centers. The gettering efficiency is very sensitive to the nature of the defects formed after implantation and annealing. The influence of the implantation parameters, particularly the temperature, has been investigated. A strong impurity gettering was observed for carbon implantation.

引用

页码：640 / 643

页数：4

共 24 条

[1]

BEADLE WE, 1985, QUICK REFERENCE MANU, P6

[2] KINETICS OF MIGRATION OF POINT DEFECTS TO DISLOCATIONS [J].

BULLOUGH, R ;

NEWMAN, RC .

REPORTS ON PROGRESS IN PHYSICS, 1970, 33 (02) :101-&

[3] EXTENDED DEFECT REMOVAL IN SILICON BY RAPID THERMAL ANNEALING [J].

CALCAGNO, L ;

SPINELLA, C ;

COFFA, S ;

RIMINI, E .

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, 1990, 12 (12) :1593-1601

[4] BURIED DOPANT AND DEFECT LAYERS FOR DEVICE STRUCTURES WITH HIGH-ENERGY ION-IMPLANTATION [J].