DETECTION OF PHOSPHORUS PILEUP AT SIO2/SI INTERFACE

被引：12

作者：

SATO, Y ^{[1
]}

IMAI, K ^{[1
]}

YOMEZAWA, H ^{[1
]}

SHIGEMATSU, T ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, INTERDISCIPLINARY RES LABS, TOKAI, IBARAKI 31911, JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1993年 / 140卷 / 12期

关键词：

Annealing composite layers - Neutron activation analysis - Phosphorus pileup;

D O I：

10.1149/1.2221156

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Oxidizing phosphorus-doped silicon or annealing composite layers of silicon dioxide and phosphorus-doped silicon causes phosphorus pileup at the SiO2 and Si interface. Neutron activation analysis of the phosphorus in an SiO2/Si sample fabricated by the oxidation of phosphorus-doped Si shows that most of the phosphorus which piles up is on the SiO2 side of the interface.

引用

页码：L176 / L177

页数：2

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