A MODEL FOR PHOSPHORUS SEGREGATION AT THE SILICON SILICON DIOXIDE INTERFACE

被引：80

作者：

LAU, F

MADER, L

MAZURE, C

WERNER, C

ORLOWSKI, M

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1989年 / 49卷 / 06期

关键词：

D O I：

10.1007/BF00616992

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：671 / 675

页数：5

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