AUGER-SPUTTER PROFILING STUDY OF PHOSPHORUS PILEUP AT SI-SIO2 INTERFACE

被引：2

作者：

SCHWARZ, SA ^{[1
]}

HELMS, CR ^{[1
]}

SPICER, WE ^{[1
]}

TAYLOR, NJ ^{[1
]}

机构：

[1] VARIAN ASSOC,PALO ALTO,CA 94305

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1978年 / 15卷 / 04期

关键词：

D O I：

10.1116/1.569778

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1519 / 1519

页数：1

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[4] JOHANNESSEN JS, UNPUBLISHED
[5] HIGH-RESOLUTION AUGER SPUTTER PROFILING STUDY OF EFFECT OF PHOSPHORUS PILEUP ON SI-SIO2 INTERFACE MORPHOLOGY
SCHWARZ, SA
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TAYLOR, NJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 227 - 230
[6] CRATER-EDGE PROFILING IN INTERFACE ANALYSIS EMPLOYING ION-BEAM ETCHING AND AES
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