HREM OF SIP PRECIPITATES AT THE (111) SILICON SURFACE DURING PHOSPHORUS PREDEPOSITION

被引：37

作者：

BOURRET, A ^{[1
]}

SCHROTER, W ^{[1
]}

机构：

[1] 4 PHYS INST,D-3400 GOTTINGEN,FED REP GER

来源：

ULTRAMICROSCOPY | 1984年 / 14卷 / 1-2期

关键词：

D O I：

10.1016/0304-3991(84)90113-X

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

引用

收藏

页码：97 / 106

页数：10

相关论文

共 14 条

[1] SIP PRECIPITATION WITHIN DOPED SILICON LATTICE, CONCOMITANT WITH PHOSPHORUS PREDEPOSITION
ARMIGLIATO, A
NOBILI, D
SERVIDORI, M
SOLMI, S
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) : 5489 - 5491
[2] EARLY STAGES OF OXYGEN SEGREGATION AND PRECIPITATION IN SILICON
BOURRET, A
THIBAULTDESSEAUX, J
SEIDMAN, DN
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) : 825 - 836
[3] COMBINED HREM AND STEM MICROANALYSIS ON DECORATED DISLOCATION CORES
BOURRET, A
COLLIEX, C
[J]. ULTRAMICROSCOPY, 1982, 9 (03) : 183 - 189
[4] TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF THE POLYCRYSTALLINE SILICON-SIO2 INTERFACE
BRAVMAN, JC
SINCLAIR, R
[J]. THIN SOLID FILMS, 1983, 104 (1-2) : 153 - 161
[5] DEGENNES PG, 1974, PHYSICS LIQUID CRYST, P277
[6] GOSELE U, 1983, DEFECTS SEMICONDUCTO
[7] Kleman M., 1980, DISLOCATIONS SOLIDS, P243
[8] SYNTHESIS AND CRYSTALLOGRAPHIC PROPERTIES OF SOME PHASES IN SIO2-P2O5 SYSTEM
LIEBAU, F
KOPPEN, N
BISSERT, G
[J]. ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1968, 359 (3-4): : 113 - &
[9] PRECIPITATION AS THE PHENOMENON RESPONSIBLE FOR THE ELECTRICALLY INACTIVE PHOSPHORUS IN SILICON
NOBILI, D
ARMIGLIATO, A
FINETTI, M
SOLMI, S
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) : 1484 - 1491
[10] ELECTRON-MICROSCOPY OF SILICON MONOPHOSPHIDE PRECIPITATES IN P-DIFFUSED SILICON
SERVIDORI, M
ARMIGLIATO, A
[J]. JOURNAL OF MATERIALS SCIENCE, 1975, 10 (02) : 306 - 313