A NEW TECHNIQUE FOR THE DETERMINATION OF BARRIER HEIGHT OF SCHOTTKY-BARRIER DIODES

被引：58

作者：

CHATTOPADHYAY, P

机构：

[1] Department of Electronic Science University College of Science 92 Acharyya Prafulla, 700 009, Chandra Road Calcutta

来源：

SOLID-STATE ELECTRONICS | 1995年 / 38卷 / 03期

关键词：

D O I：

10.1016/0038-1101(94)00167-E

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

[No abstract available]

引用

页码：739 / 741

页数：3

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[7] A STUDY OF THE ELECTRICAL AND INTERFACIAL PROPERTIES OF SPUTTERED TI/SI AND SPUTTERED TISI2/SI SCHOTTKY BARRIERS [J].

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