A NOVEL BETA-SIC/SI HETEROJUNCTION BACKWARD DIODE

被引：13

作者：

HWANG, JD

FANG, YK

CHEN, KH

YAUNG, DN

机构：

[1] VLSI Technology Laboratory, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 05期

关键词：

D O I：

10.1109/55.382237

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, a novel beta-SiC/Si heterojunction backward diode has-been developed successfully. The developed new backward diode is somewhat different from a conventional one, The beta-SiC thin film was grown by a low pressure rapid thermal chemical vapor deposition (LP-RTCVD) using a SiH4-C3H8-H2 gas system. Its current-voltage characteristics under different operation temperatures (25-200 degrees C) have been measured. In addition, the curvature coefficient gamma has also been calculated and it is found to be insensitive to temperature variation up to 180 degrees C. The operation temperature is the highest reported thus far, to our knowledge.

引用

页码：193 / 195

页数：3

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