MEASUREMENT OF ALUMINUM CONCENTRATION IN GAALAS EPITAXIAL LAYERS BY DOUBLE-AXIS X-RAY-DIFFRACTION

被引：12

作者：

TANNER, BK

MILES, SJ

PETERSON, GG

SACKS, RN

机构：

[1] UNITED TECHNOL RES CTR,E HARTFORD,CT 06108

[2] BEDE SCI INSTRUMENTS,DURHAM DH6 4HE,ENGLAND

来源：

关键词：

D O I：

10.1016/0167-577X(88)90019-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：239 / 241

页数：3

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[4]

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[5] STRUCTURE OF VAPOR-DEPOSITED GAXIN1-XAS CRYSTALS [J].

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[6]

TANNER BK, 1986, MATER RES SOC S P, V69, P191

[7] GROWTH OF ZNSE ON GE(100) SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

YAMAGUCHI, E ;

TAKAYASU, I ;

MINATO, T ;

KAWASHIMA, M .