ETCHING ROUGHNESS FOR (100) SILICON SURFACES IN AQUEOUS KOH

The quality of vertical roughness produced by the etching of Si in aqueous KOH has been studied by varying several experimental parameters such as molarity, time of etching, temperature, and stirring. We note that at room temperature, unstirred etching is smoother at low and high molarities, and etch rate and roughness both peak near 5-6 M. With no stirring, roughness increases as a function of etch time, then levels off. With stirring, roughness decreases, especially around the peak etch rate near 5-6 M. For a fixed molarity like 5 M, unstirred etching becomes smoother with increasing temperature even as the etch rate increases rapidly. Such results suggest that masking by hydrogen bubbles or silicate etch products is the principle origin of vertical roughness. Bubble properties as a function of molarity and stirring (as determined from electrolysis experiments) are used to suggest a pseudo-masking model to explain some roughness properties.