DIMERIZATION INDUCED BE SEGREGATION IN GAAS

被引：5

作者：

CUNNINGHAM, JE

GOOSSEN, KW

CHIU, TH

WILLIAMS, MD

JAN, W

STORZ, F

机构：

[1] AT and T Bell Laboratories, Holmdel

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 11期

关键词：

D O I：

10.1063/1.108744

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the observation of a Be segregation rate in GaAs that depends linearly on Be content. When delta-Be is codoped with delta-Si this segregation dependence changes and is observed to follow a model of segregation we develop based on Be dimerization. Further, we present the first evidence that GaAs surfaces order upon delta-Be deposition. The observed surface reconstructions could also result from Be dimerization. The energy gained from dimerization causes Be to segregate during growth.

引用

收藏

页码：1236 / 1238

页数：3

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