CONFINEMENT OF DELTA BE AT THE ONE MONOLAYER LEVEL IN GAAS

被引：6

作者：

CUNNINGHAM, JE

WILLIAMS, M

CHIU, TH

JAN, W

STORZ, F

WESTERWICK, E

机构：

[1] AT and T Bell Laboratories, Holmdel

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 120卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90408-B

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We investigate growth dependences to the planar confinement of Be near the 1 monolayer, ML, level when delta-doped in GaAs. We examine concentration dependences on the rates of segregation and diffusion, as well as the effect of As2, AS2 and AsH3 overpressure on Be confinement during growth. Evidence from both chemical profiling and surface electron diffraction point to a Be surface dimerization process that drives dopant segregation.

引用

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页码：306 / 311

页数：6

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