VERY HIGH-PURITY GAAS GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY

被引：9

作者：

CUNNINGHAM, JE ^{[1
]}

TIMP, G ^{[1
]}

CHIU, TH ^{[1
]}

DITZENBERGER, JA ^{[1
]}

TSANG, WT ^{[1
]}

SERGENT, AM ^{[1
]}

LANG, DV ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(89)90378-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：185 / 188

页数：4

共 8 条

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[2] ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS [J].

CALAWA, AR .

APPLIED PHYSICS LETTERS, 1981, 38 (09) :701-703

[3]

CUNNINGHAM JE, IN PRESS APPL PHYS L

[4]

LANG DV, 1976, J APPL PHYS, V47, P2658

[5] STOICHIOMETRY EFFECTS ON SURFACE-PROPERTIES OF GAAS(100) GROWN INSITU BY MBE [J].

MASSIES, J ;

ETIENNE, P ;

DEZALY, F ;

LINH, NT .

SURFACE SCIENCE, 1980, 99 (01) :121-131

[6] MOLECULAR-BEAM EPITAXY OF GAAS AND INP WITH GAS SOURCES FOR ARSINE AND P [J].

PANISH, MB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (12) :2729-2733

[7] ELECTRON TRANSPORT IN GAAS [J].

RODE, DL ;

KNIGHT, S .

PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (08) :2534-&

[8]

SKOMME BJ, 1985, J APPL PHYS, V58, P12

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