DIFFUSION LIMITED DELTA-DOPING PROFILES IN GAAS GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY

被引：12

作者：

CUNNINGHAM, JE

CHIU, TH

OURMAZD, A

JAN, W

KUO, TY

机构：

[1] AT and T Bell Laboratories, Holmdel

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 105卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90348-O

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report on results that compare the planar confinement, diffusion and surface segregation of Si and Be δ-doped GaAs grown by gas source molecular beam epitaxy and conventional molecular beam epitaxy. For gas source molecular beam epitaxy growth of †-doped Si and Be we observed diffusion limited doping profile distributions. In molecular beam epitaxy growth the doping profiles further broaden by an impurity surface segregation process. © 1990.

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页码：111 / 115

页数：5

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