EFFECT OF SUBSTRATE-TEMPERATURE ON MIGRATION OF SI IN PLANAR-DOPED GAAS

被引：75

作者：

SANTOS, M

SAJOTO, T

ZRENNER, A

SHAYEGAN, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 25期

关键词：

D O I：

10.1063/1.100225

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2504 / 2506

页数：3

共 15 条

[1] ASHCROFT NW, 1976, SOLID STATE PHYS, P264
[2] MIGRATION OF SI IN DELTA-DOPED GAAS
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CLEGG, JB
HARRIS, JJ
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[3] QUANTUM SIZE EFFECT IN DELTA-DOPED ALGAAS HETEROSTRUCTURES
CUNNINGHAM, JE
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DITZENBERGER, JA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02): : 599 - 602
[4] QUANTUM SIZE EFFECT IN MONOLAYER-DOPED HETEROSTRUCTURES
CUNNINGHAM, JE
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TIMP, G
SCHUBERT, EF
CHANG, AM
OWUSUSEKYERE, K
[J]. PHYSICAL REVIEW B, 1988, 37 (08): : 4317 - 4320
[5] GAAS STRUCTURES WITH ELECTRON-MOBILITY OF 5X10(6)CM2/VS
ENGLISH, JH
GOSSARD, AC
STORMER, HL
BALDWIN, KW
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (25) : 1826 - 1828
[6] SILICON DOPING OF MBE-GROWN GAAS FILMS
NEAVE, JH
DOBSON, PJ
HARRIS, JJ
DAWSON, P
JOYCE, BA
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 32 (04): : 195 - 200
[7] DELTA-(DELTA-) DOPING IN MBE-GROWN GAAS - CONCEPT AND DEVICE APPLICATION
PLOOG, K
[J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 304 - 313
[8] SPATIAL LOCALIZATION OF IMPURITIES IN DELTA-DOPED GAAS
SCHUBERT, EF
STARK, JB
ULLRICH, B
CUNNINGHAM, JE
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (18) : 1508 - 1510
[9] GROWTH OF LOW-DENSITY TWO-DIMENSIONAL ELECTRON-SYSTEM WITH VERY HIGH MOBILITY BY MOLECULAR-BEAM EPITAXY
SHAYEGAN, M
GOLDMAN, VJ
JIANG, C
SAJOTO, T
SANTOS, M
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (13) : 1086 - 1088
[10] ELECTRON-ENERGY LEVELS IN GAAS-GA1-XALXAS HETEROJUNCTIONS
STERN, F
DASSARMA, S
[J]. PHYSICAL REVIEW B, 1984, 30 (02) : 840 - 848

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